Author:
Kamezawa C.,Sindou H.,Hirao T.,Ohyama H.,Kuboyama S.
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Y. Goldberg, et al., Properties of Advanced Semiconductor Materials: GaN, AlN, SiC, BN, SiC, SiGe, in: M.E. Levinshtein, et al., (Ed.), Wiley, New York, 2001, pp. 93–148.
2. Compound semiconductor radiation detectors
3. Measurements and simulations of charge collection efficiency of p+/n junction SiC detectors
4. Surface analysis and defect characterization of 4H–SiC wafers for power electronic device applications
5. A new generation of X-ray detectors based on silicon carbide
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