Failure analysis of heavy ion-irradiated silicon carbide junction barrier Schottky diodes-Reference-Cited by-同舟云学术

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Failure analysis of heavy ion-irradiated silicon carbide junction barrier Schottky diodes

Published:2024-06 Issue: Volume:157 Page:115401
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Cao Shuang,Yu Qingkui,Wang Qianyuan,Wang He,Sun Yi,Lv He,Mei Bo,Mo Rigen,Li Pengwei,Zhang Hongwei

Funder

Chinese Academy of Sciences

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference8 articles.

1. Single-event effects in silicon carbide power devices;Lauenstein,2015

2. Study of heavy ions induced single event effect on SiC junction barrier Schottky diodes;Yu;Mod. Appl. Phys.,2019

3. Heavy ion-induced damage in SiC Schottky barrier diode;Kamezawa;Phys. B Condens. Matter,2006

4. Failure analysis of heavy-ion-irradiated Schottky diodes[J];Casey;IEEE Trans. Nucl. Sci.,2017

5. Status of the gallium nitride high electron mobility transistor radiation testing for the NEPP program;Scheick,2017

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on the Single-Event Burnout Effect Mechanism of SiC MOSFETs Induced by Heavy Ions;Electronics;2024-08-27

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