Surface analysis and defect characterization of 4H–SiC wafers for power electronic device applications-Reference-Cited by-同舟云学术

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Surface analysis and defect characterization of 4H–SiC wafers for power electronic device applications

Published:2003-07 Issue:3-7 Volume:12 Page:1224-1226
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Scaltrito L

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reducing Atomic Defects in 2D Transition Metal Dichalcogenides;Advanced Functional Materials;2024-09-03

2. Silicon and Silicon Carbide Recrystallization by Laser Annealing: A Review;Materials;2023-12-16

3. Wafer Level Integration of 3-D Heat Sinks in Power ICs;IEEE Transactions on Electron Devices;2017-10

4. Series resistance study of Schottky diodes developed on 4H-SiC wafers using a contact of titanium or molybdenum;Microelectronic Engineering;2013-06

5. EFFECT OF EXCITATION WAVELENGTH ON THE RAMAN SPECTRUM OF HEXAGONAL DEFECTS IN 4H-SiC;Modern Physics Letters B;2013-02-05

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