Investigation of Advanced GaN and SiC Semiconductor Materials: Key Characteristics and Diverse Applications

Abstract

The development of wide band gap (WBD) semiconductor materials has gained enormous attention to, and among all the materials, gallium nitride (GaN) and silicon carbide (SiC) are at heart because of their high-temperature endurance and enormous potential in high voltage uses. This article summarizes both materials' basics and current status, starting from comparatively illustrating their distinctive merits, such as high breakdown voltage and excellent thermal conductivity. Followed up is a critical overview of various facile preparation strategies, and the advantages and disadvantages of the methods are concluded shortly. Finally, the real-world applications of these two materials are presented and analyzed, and both similar and unique uses for GaN and SiC are illustrated. The bright future of both materials is concluded, and this article clarifies the information needed for both materials throughout the progression.