Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- application
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference27 articles.
1. Insulator investigation on SiC for improved reliability
2. Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiC
3. Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal–oxide–semiconductor devices
4. Al2O3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001)
5. Electrical characteristics of metal/AlN/n‐type 6H–SiC(0001) heterostructures
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1. Epitaxial growth of Nd2O3 layers on virtual SiGe substrates on Si(111);Journal of Applied Physics;2024-03-19
2. Interfacial layer formation during the growth of Gd2O3 on Si(001) and its thermal stability;Semiconductor Science and Technology;2021-10-19
3. Tuning of structural and dielectric properties of Gd2O3 grown on Si(001);Journal of Applied Physics;2020-08-07
4. Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001);Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials;2019-01-23
5. Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor Structure;Nanoscale Research Letters;2016-09-29
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