Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy

Published:2016-05 Issue: Volume:93 Page:27-31
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Rong Xin,Wang Xinqiang,Chen Guang,Pan Jianhai,Wang Ping,Liu Huapeng,Xu Fujun,Tan Pingheng,Shen Bo

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet lightemitting diodes;Hirayama;Jpn. J. Appl. Phys.,2014

2. Solar-blind AlGaN MSM photodetectors with 24% external quantum efficiency at 0 V;Brendel;Electron. Lett.,2015

3. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates;Bryan;Appl. Phys. Lett.,2015

4. Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template;Katagiri;J. Cryst. Growth,2009

5. Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes;Jain;Appl. Phys. Lett.,2008

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1. HR-XRD and AFM Analysis of AlN/SiC Structures for Optoelectronic Device Applications;Gazi University Journal of Science Part A: Engineering and Innovation;2024-06-29

2. Organized AlN Nanowire Arrays by Hybrid Approach of Top-Down Processing and MOVPE Overgrowth for Deep UV Emission Devices;ACS Applied Nano Materials;2024-05-01

3. Three-step growth of AlN films on sapphire substrates by metal nitride vapor phase epitaxy;Journal of Crystal Growth;2024-01

4. Polarity Control of High Crystalline Quality Aln Thin Films Grown on Si(111) Substrates by Molecular Beam Epitaxy;2024

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