Author:
Galiana Beatriz,Barrigón Enrique,Rey-Stolle Ignacio,Corregidor Victoria,Espinet Pilar,Algora Carlos,Alves E.
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. Germanium: From the first application of Czochralski crystal growth to large diameter dislocation-free wafers;Depuydt;Materials Science in Semiconductor Processing,2006
2. B. Galiana, K. Volz, I. Rey-Stolle, W. Stolz, C. Algora, Influence of nucleation layers on MOVPE grown GaAs on Ge wafers for concentrator solar cells, in: Proc. of 4th World Conference on Photovoltaic Energy Conversion, 2006
3. Research of surface morphology in Ga(In)As epilayers on Ge grown by MOVPE for multi-junction solar cells;Wu;Journal of Crystal Growth,2007
4. Atomic force microscopic study of surface morphology in Si-doped epi-GaAs on Ge substrates: Effect of off-orientation;Hudait;Materials Research Bulletin,2000
5. S.A. Ringel, R.M. Sieg, S.M. Ting, E.A. Fitzgerald, Anti-phase domain-free GaAs on Ge substrates grown by MBE for space solar cell applications, in: Proc. 26th PVSC, 1997, pp. 793–798
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