Research of surface morphology in Ga(In)As epilayers on Ge grown by MOVPE for multi-junction solar cells-Reference-Cited by-同舟云学术

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Research of surface morphology in Ga(In)As epilayers on Ge grown by MOVPE for multi-junction solar cells

Published:2007-01 Issue: Volume:298 Page:767-771
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wu Pei-Hsuan,Su Yan-Kuin,Chen I-Liang,Chen Shang-Fu,Chiou Chih-Hung,Guo Sheng-Huei,Hsu Jung-Tsung,Chen Wen-Ray

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. GaAs/Ge/GaAs heterostructures by molecular beam epitaxy

2. PnpGaAs/Ge/Ge phototransistor grown by molecular beam epitaxy: Implications for bipolar and hot‐electron transistors

3. T. Takamoto, T. Agui, K. Kamimura, M. Kaneiwa, in: Third World Conference on Photovoltaic Energy Conversion, 2003, pp. 11–13.

4. High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth optimization of quantum-well-enhanced multijunction photovoltaics;Cell Reports Physical Science;2023-06

2. The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD – Application to a 200mm GaAs virtual substrate;Journal of Crystal Growth;2015-07

3. Effects of Al0.3Ga0.7As interlayer with pulsed atomic layer epitaxy on heterogeneous integration of GaAs/Ge grown by MOCVD;Journal of Alloys and Compounds;2014-03

4. Heteroepitaxy of GaAs on (001) ⇒ 6° Ge substrates at high growth rates by hydride vapor phase epitaxy;Journal of Applied Physics;2013-05-07

5. Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium;Journal of Applied Physics;2012-07-15

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