Study on the negative transconductance behaviour in GaAs/AlGaAs based HEMT

Author:

Singh Sujit Kumar,Tripathi Awnish Kumar,Saini Gaurav

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. December. Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM;Lee,2008

2. A comparative study on the switching performance of GaN and Si power devices for bipolar complementary modulated converter legs;Wang;Energies,2019

3. Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT;Lenka;Semiconductors,2011

4. May. GaAs metamorphic HEMT (MHEMT): an attractive alternative to InP HEMTs for high performance low noise and power applications;Whelan,2000

5. A broadband GaNpHEMT power amplifier using non-Foster matching;Lee;IEEE Trans. Microw. Theor. Tech.,2015

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. RF/Linearity figures of merit estimation for GaAs and GaN/SiC-based Nano-HEMTs;Micro and Nanostructures;2022-11

2. Simulation of Recessed Gate Pseudomorphic AlGaAs/InGaAs/GaAs HEMT for RF Applications;2022 6th International Conference on Devices, Circuits and Systems (ICDCS);2022-04-21

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