Investigation of transport in edge passivated armchair silicene nanoribbon field effect transistor by ab-initio based Wannierised tight binding
Author:
Funder
Ministry of Electronics and Information technology
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Edge-passivation modulation of the transport properties in zigzag stanene nanoribbons;Physical Review B;2024-06-13
2. Performance Comparison of 2D Mono-Elemental (X-enes) Armchair Nanoribbon Schottky Barrier Field Effect Transistors;IEEE Transactions on Nanotechnology;2024
3. Investigation of structural, electronic and transport properties of Silicene on Graphene heterostructure by ab-initio calculations;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11
4. Effect of strain on quantum transport in fully-hydrogenated silicene based field effect transistor;Micro and Nanostructures;2022-12
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