Analytical modeling of subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference31 articles.
1. A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical Gaussian-like doping profile
2. Two-Dimensional Analytical Threshold Voltage and Subthreshold Swing Models of Undoped Symmetric Double-Gate MOSFETs
3. Compact model for highly-doped double-gate SOI MOSFETs targeting baseband analog applications
4. Compact Subthreshold Current Modeling of Short-Channel Nanoscale Double-Gate MOSFET
5. Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs
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