Author:
Suguna M.,Nithya sree V. A.,Kaveri R.,Hemalatha M.,Balamurugan N. B.,Sriramkumar D.,Dhanaselvam P. Suveetha
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Saurabh, S., Jagadesh Kumar, M.: Fundamentals of tunnel field-effect transistors, India (2016)
2. Colinge, J.-P., Lee, C.-W., Afzalian, A., Akhavan, N.D., Yan, R., Ferain, I., Razavi, P., O’Neill, B., Blake, A., White, M., Kelleher, A.-M., Mc Carthy, B., Murphy, R.: Nanowire transistors without junctions. Nat. Nanotechnol. 5(3), 225–229 (2010)
3. Lee, C.-W., Afzalian, A., Akhavan, N.D., Yan R., Ferain, I., Colinge, J.-P.: Junctionless multigate field-effect transistor. Appl. Phys. Lett 2(5), 053511-1–053511-2 (2009)
4. Colinge, J.P., Kranti, A., Yan, R., Lee, C.W., Ferain, I., Yu, R., Dehdashti Akhavan, N., Razavi, P.: Junctionless nanowire transistor (JNT): Properties and design guidelines. Solid State Electron. 65-66, 33–37 (2011)
5. Boucart, K., Ionescu, A.M.: Double-gate tunnel FET with high-κ gate dielectric. IEEE Trans. Electron. Devices 54(7), 1725–1733 (2007)
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. VLSI Implementation of Modified Karatsuba Multiplier for Low Power Applications;2024 International Conference on Smart Systems for Electrical, Electronics, Communication and Computer Engineering (ICSSEECC);2024-06-28