Electrical properties and carrier transport mechanism in V/p-GaN Schottky diode at high temperature range
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference43 articles.
1. A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers
2. Radiation effects in GaN materials and devices
3. Prospects of III-nitride optoelectronics grown on Si
4. Dual detection of ultraviolet and visible lights using a DNA-CTMA/GaN photodiode with electrically different polarity
5. Electrical characteristics of TMAH-surface treated Ni/Au/Al2O3/GaN MIS Schottky structures
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