Radiation hardness of silicon detectors based on pre-irradiated silicon-Reference-Cited by-同舟云学术

Radiation hardness of silicon detectors based on pre-irradiated silicon

Published:2006-11 Issue:1 Volume:568 Page:78-82
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Litovchenko P.G.,Groza A.A.,Lastovetsky V.F.,Barabash L.I.,Starchik M.I.,Dubovoy V.K.,Bisello D.,Giubilato P.,Candelori A.,Rando R.,Litovchenko A.P.,Khomenkov V.,Wahl W.,Boscardin M.,Zorzi N.,Dalla Betta G.-F.,Cindro V.,Mikelsen M.,Monakhov E.V.,Svensson B.G.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. RD50 webpage: http://www.cern.ch/rd50.

2. Radiation-hard semiconductor detectors for SuperLHC;Bruzzi;Nucl. Instr. and Meth. A,2005

3. Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide

4. Topsil Semiconductor Materials A/S, Linderupvej 4, 3600 Frederikssund, Denmark.

5. Radiation Hardening of Silicon for Detectors by Preliminary Irradiation

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