Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide-Reference-Cited by-同舟云学术

Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide

Published:2001-02-16 Issue:2 Volume:4 Page:85-90
ISSN:1560-8034
Container-title:Semiconductor Physics, Quantum Electronics and Optoelectronics
language:
Short-container-title:Semicond. Phys. Quantum Electron. Optoelectron.

Author:

Litovchenko P.G.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

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3. 3. A.G. Italiantsev, A.I. Kurbanov, V.N. Mordkovich, E.E. Rubinova, E.M. Temper, V.A. Trunov, Influence of neutron irradiation and annealing on Si, doped with Ge, properties // Fiz. Tekhn. Polupr., 22(5) p. 834-838 (1988).

4. 4. K.L. Starostin, Temperature dependence of concentration decreasing rate in n-Ge and n-Si under fast neutron irradiation // Fiz. Tekhn. Polupr., 4(9) p. 1823-1824 (1970).

5. 5. G.S. Karumidze, Temperature irradiation influence with neutrons on defects of structure formation in CZ Si // Fiz. Tekhn.Polupr., 24(11) p. 1973-1977 (1990).

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