Radiation Hardening of Silicon for Detectors by Preliminary Irradiation-Reference-Cited by-同舟云学术

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Radiation Hardening of Silicon for Detectors by Preliminary Irradiation

Published:2003-09 Issue: Volume:95-96 Page:399-404
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Litovchenko P.G.¹,Bisello D.²,Candelori A.²,Litovchenko A.P.,Groza A.A.¹,Dolgolenko A.P.³,Khivrich V.I.,Barabash L.I.,Lastovetsky V.F.,Polivtsev L.A.,Wahl W.,Wyss J.⁴

Affiliation:

1. Institute for Nuclear Research of NASU

2. Università di Padova

3. Institute for Nuclear Researches NAS Ukraine

4. Università di Cassino

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.95-96.399.pdf

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation hardness of silicon detectors based on pre-irradiated silicon;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-11

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