Simulation of synergistic effects on lateral PNP bipolar transistors induced by neutron and gamma irradiation-Reference-Cited by-同舟云学术

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Simulation of synergistic effects on lateral PNP bipolar transistors induced by neutron and gamma irradiation

Published:2015-10 Issue: Volume:796 Page:108-113
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Wang Chenhui,Bai Xiaoyan,Chen Wei,Yang Shanchao,Liu Yan,Jin Xiaoming,Ding Lili

Funder

National Natural Science Foundation of China

Foundation of State Key Laboratory of China

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. The effects of neutron irradiation on gamma sensitivity of linear integrated circuits

2. Analytical model for proton radiation effects in bipolar devices

3. Proton radiation response mechanisms in bipolar analog circuits

4. Simultaneous and Sequential Radiation Effects on NPN Transistors Induced by Protons and Electrons

5. Synergistic Radiation Effects on PNP Transistors Caused by Protons and Electrons

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1. Response Mechanisms of Additional Displacement Defects in Oxides to Ionization Damage in Bipolar Transistors;IEEE Transactions on Nuclear Science;2023-05

2. Combined effects of total ionizing dose and electromagnetic pulse on a bipolar junction transistor;Journal of Instrumentation;2023-04-01

3. The Effects of Displacement Damage on Ionization Effect in SiO₂ Layer of Bipolar Transistor;IEEE Transactions on Nuclear Science;2022-11

4. Investigation of Neutron Displacement Effects in Bipolar Amplifiers With Lateral and Substrate p-n-p Input Transistors;IEEE Transactions on Nuclear Science;2022-08

5. Synergistic Effects of Ionizing Dose and Displacement Damage on SiGe Heterojunction Bipolar Transistors;IEEE Transactions on Nuclear Science;2022-05

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