Investigation of Neutron Displacement Effects in Bipolar Amplifiers With Lateral and Substrate p-n-p Input Transistors
Author:
Affiliation:
1. State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an, China
2. State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing, China
Funder
National Natural Science Foundation of China
Foundation of State Key Laboratory of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx7/23/9858187/09771408.pdf?arnumber=9771408
Reference21 articles.
1. Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration
2. The effects of gamma irradiation on neutron displacement sensitivity of lateral PNP bipolar transistors
3. Displacement Damage Effects in Irradiated Semiconductor Devices
4. A Framework for Understanding Displacement Damage Mechanisms in Irradiated Silicon Devices
5. The Effects of Neutron Irradiation on Germanium and Silicon
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