Response Mechanisms of Additional Displacement Defects in Oxides to Ionization Damage in Bipolar Transistors
Author:
Affiliation:
1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, China
2. School of Physics, Harbin Institute of Technology, Harbin, China
3. Heilongjiang Institute of Atomic Energy, Harbin, China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx7/23/10129064/10073558.pdf?arnumber=10073558
Reference38 articles.
1. Simulation of radiation effects in ultra-thin insulating layers
2. Charge separation for bipolar transistors
3. A mechanism for Frenkel defect creation in amorphous SiO2facilitated by electron injection
4. Trends in the total-dose response of modern bipolar transistors
5. Defect interactions of H2 in SiO2: Implications for ELDRS and latent interface trap buildup;tuttle;IEEE Trans Nucl Sci,2010
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