Measurements and TCAD simulations of guard-ring structures of thin silicon sensors before and after irradiation-Reference-Cited by-同舟云学术

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Measurements and TCAD simulations of guard-ring structures of thin silicon sensors before and after irradiation

Published:2024-12 Issue: Volume:1069 Page:169801
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Croci T.^ORCID,Fondacci A.^ORCID,White R.^ORCID,Durando M.^ORCID,Galletto S.,Borghi G.^ORCID,Paternoster G.,Vignali M. Centis^ORCID,Boscardin M.,Arcidiacono R.^ORCID,Cartiglia N.^ORCID,Moscatelli F.^ORCID,Passeri D.^ORCID,Ferrero M.^ORCID,Sola V.,Morozzi A.^ORCID

Funder

Istituto Nazionale di Fisica Nucleare

Horizon 2020

Publisher

Elsevier BV

Reference6 articles.

1. Next-generation tracking system for future hadron colliders;Sola;PoS,2019

2. An Introduction to Ultra-Fast Silicon Detectors;Ferrero,2021

3. TCAD simulations for radiation-tolerant silicon sensors;Morozzi;PoS,2024

4. TCAD modeling of bulk radiation damage effects in silicon devices with the perugia radiation damage model;Asenov;Nucl. Instrum. Methods A,2022

5. Advances in the TCAD modelling of non-irradiated and irradiated Low-Gain Avalanche Diode sensors;Croci;J. Instrum.,2024

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