TCAD modeling of bulk radiation damage effects in silicon devices with the Perugia radiation damage model-Reference-Cited by-同舟云学术

TCAD modeling of bulk radiation damage effects in silicon devices with the Perugia radiation damage model

Published:2022-10 Issue: Volume:1040 Page:167180
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Asenov Patrick,Arcidiacono Roberta,Cartiglia Nicolo,Croci Tommaso,Ferrero Marco,Fondacci Alessandro,Morozzi Arianna,Moscatelli Francesco,Passeri Daniele,Sola Valentina

Funder

MIUR

Fondazione Bruno Kessler

Horizon 2020 Framework Programme

Instituto Nazionale di Fisica Nucleare

Horizon 2020

European Commission

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

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4. Sentaurus Device User Manual URL https://www.synopsys.com/.

5. TCAD modeling of surface radiation damage effects: A state-of-the-art review;Morozzi;Front. Phys.,2021

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1. Measurements and TCAD simulations of guard-ring structures of thin silicon sensors before and after irradiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-12

2. TCAD simulation of the electrical performance of the ATLAS18 strip sensor for the HL-LHC;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-11

3. Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer;Journal of Instrumentation;2024-07-01

4. TCAD Simulations of Innovative Low-Gain Avalanche Diodes for Particle Detector Design and Optimization;Proceedings of the 31st International Workshop on Vertex Detectors (VERTEX2022);2024-06-23

5. Advances in the TCAD modelling of non-irradiated and irradiated Low-Gain Avalanche Diode sensors;Journal of Instrumentation;2024-01-01