Advances in the TCAD modelling of non-irradiated and irradiated Low-Gain Avalanche Diode sensors

Abstract

Abstract The recently developed Low-Gain Avalanche Diode (LGAD) technology has gained growing interest within the high-energy physics (HEP) community, thanks to its capability of internal signal amplification that improves the particle detection. Since the next generation of HEP experiments will require tracking detectors able to efficiently operate in environments where expected fluences will exceed 1 × 1017 1 MeV n eq/cm2, the design of radiation-resistant particle detectors becomes of utmost importance. To this purpose, Technology Computer-Aided Design (TCAD) simulations are a relevant part of the current detector R&D, not only to support the sensor design and optimization, but also for a better understanding and modelling of radiation damage. In this contribution, the recent advances in the TCAD modelling of non-irradiated and irradiated LGAD sensors are presented, whose validation relies on the agreement between the simulated and experimental data — in terms of current-voltage (I-V), capacitance-voltage (C-V), and gain-voltage (G-V) characteristics, coming from devices manufactured by Hamamatsu Photonics (HPK), and accounting for different irradiation levels and temperatures.