The impact of neutral base region on the collected charge in heavily irradiated silicon detectors
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference21 articles.
1. Operation of heavily irradiated silicon detectors in non-depletion mode
2. Concept of Double Peak electric field distribution in the development of radiation hard silicon detectors
3. Space charge sign inversion and electric field reconstruction in 24GeV/c proton-irradiated MCz Si p+-n(TD)-n+ detectors processed via thermal donor introduction
4. Measurement of anomalously high charge collection efficiency in n+p strip detectors irradiated by up to 1016neq/cm2
5. Observation of full charge collection efficiency in heavily irradiated n+p strip detectors irradiated up to 3×1015neq/cm2
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The impact of active base on the bulk current in silicon heavily irradiated detectors;Journal of Instrumentation;2017-09-07
2. Restriction on the gain in collected charge due to carrier avalanche multiplication in heavily irradiated Si strip detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2013-12
3. Complete suppression of reverse annealing of neutron radiation damage during active gamma irradiation in MCZ Si detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2013-01
4. Operational voltage of silicon heavily irradiated strip detectors utilizing avalanche multiplication effect;Journal of Instrumentation;2012-02-28
5. Avalanche effect in Si heavily irradiated detectors: Physical model and perspectives for application;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2011-12
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