Complete suppression of reverse annealing of neutron radiation damage during active gamma irradiation in MCZ Si detectors
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. The effect of oxygen impurities on radiation hardness of FZ silicon detectors for HEP after neutron, proton and gamma irradiation
2. Bulk damage effects in standard and oxygen-enriched silicon detectors induced by 60Co-gamma radiation
3. R. Wunstorf, Ph.D. Thesis, University of Hamburg, 1992, DESY FH1K-92-01.
4. Paradoxes of steady-state and pulse operational mode characteristics of silicon detectors irradiated by ultra-high doses of γ-rays
5. Gamma radiation induced space charge sign inversion and re-inversion in p-type MCZ Si detectors and in proton-irradiated n-type MCZ Si detectors
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electric field distribution in Si detectors irradiated with 40Ar ions: experimental study and simulation;Journal of Instrumentation;2020-02-19
2. Reverse annealing studies of irradiated silicon by use of current–voltage measurements;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-02
3. Numerical simulation of 60Co-gamma irradiation effects on electrical characteristics of n-type FZ silicon X-ray detectors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-07
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