Avalanche effect in Si heavily irradiated detectors: Physical model and perspectives for application

Author:

Eremin V.,Verbitskaya E.,Zabrodskii A.,Li Z.,Härkönen J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference17 articles.

1. Observation of full charge collection efficiency in heavily irradiated n+p strip detectors irradiated up to 3×1015neq/cm2

2. Charge collection efficiencies of planar silicon detectors after reactor neutron and proton doses up to

3. The impact of neutral base region on the collected charge in heavily irradiated silicon detectors

4. V. Eremin, E. Verbitskaya, Z. Li, J. Härkönen, The avalanche effect in operation of heavily irradiated Si p-i-n detectors, pres. at 14 RD50 collaboration workshop, June 3–5, 2009, Freiburg. Available: 〈www.cern.ch/rd50〉.

5. V. Eremin, E. Verbitskaya, A. Zabrodskii, CCE in irradiated silicon detectors considering the avalanche effect, presented at 15 RD50 Collaboration Workshop, November 16–18, 2009, Geneva, CERN. Available: 〈www.cern.ch/rd50〉.

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