Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons-Reference-Cited by-同舟云学术

Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons

Published:2020-04 Issue: Volume:958 Page:162221
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Gurimskaya Yana,Dias de Almeida Pedro,Fernandez Garcia Marcos,Mateu Suau Isidre,Moll Michael,Fretwurst Eckhart,Makarenko Leonid,Pintilie Ioana

Funder

European Union’s Horizon 2020 Research and Innovation program

IFA-CERN -11

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

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2. Reactions of interstitial carbon with impurities in silicon particle detectors;Makarenko;J. Appl. Phys.,2007

3. P. Almeida, et al. Characterization of acceptor removal in silicon pad diodes irradiated by protons and neutrons, 32nd RD50 Workshop (4-6 June 2018, Hamburg, Germany).

4. The origin of double peak electric field distribution in heavily irradiated silicon detectors;Eremin;Nucl. Instrum. Methods Phys. Res. A,2002

5. Displacement damage in silicon detectors for high energy physics;Moll;IEEE Trans. Nucl. Sci.,2018

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