High-resolution three-dimensional imaging of a depleted CMOS sensor using an edge Transient Current Technique based on the Two Photon Absorption process (TPA-eTCT)-Reference-Cited by-同舟云学术

High-resolution three-dimensional imaging of a depleted CMOS sensor using an edge Transient Current Technique based on the Two Photon Absorption process (TPA-eTCT)

Published:2017-02 Issue: Volume:845 Page:69-71
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

García Marcos Fernández,Sánchez Javier González,Echeverría Richard Jaramillo,Moll Michael,Santos Raúl Montero,Moya David,Pinto Rogelio Palomo,Vila Iván

Funder

Spanish Ministry of Economy and Competitiveness

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. F.R.Palomo. et al., Two photon absorption and carrier generation in semiconductors, 25th RD50 General Meeting.

2. I. Vila. et al., TPA-TCT: a novel transient current technique based on the two photon absorption process, 25th RD50 General Meeting.

3. Development of transient current and charge techniques for the measurement of effective net concentration of ionized charges (Neff) in the space charge region of p-n junction detectors

4. Two Photon Absorption, Nonlinear Refraction, And Optical Limiting In Semiconductors

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