Characterization of thin p-on-p radiation detectors with active edges
Author:
Funder
MSMT Grant Research Infrastructure
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference18 articles.
1. A new technique for the fabrication of thin silicon radiation detectors
2. Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC
3. First results on the charge collection properties of segmented detectors made with p-type bulk silicon
4. Effects of accelerated annealing on p-type silicon micro-strip detectors after very high doses of proton irradiation
5. Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Performance of n-on-p planar pixel sensors with active edges at high-luminosity environment;The European Physical Journal Plus;2020-01
2. Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection;Journal of Instrumentation;2017-09-27
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