Author:
Foulon F.,Rousseau L.,Babadjian L.,Spirkovitch S.,Brambilla A.,Bergonzo P.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Cited by
10 articles.
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1. Novel Ultrafast Backscattered Electron Detector With Field-Effect Transistor Enhanced In Situ Signal Amplification;IEEE Transactions on Electron Devices;2023-03
2. Characterization of thin p-on-p radiation detectors with active edges;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2016-03
3. Fabrication of a thin silicon detector with excellent thickness uniformity;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2016-02
4. Characterizations of new ΔE detectors for single-ion hit facility;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-01
5. Fabrication and Characterization of Ultra-Thin PIN Silicon Detectors for Counting the Passage of MeV Ions;IEEE Transactions on Nuclear Science;2013-04