Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions-Reference-Cited by-同舟云学术

Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions

Published:2002-04 Issue:1-3 Volume:481 Page:297-305
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Kramberger G,Cindro V,Mandić I,Mikuž M,Zavrtanik M

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

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2. Readout of non-irradiated and irradiated strip detectors with fast analogue electronics

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4. The use of the signal current pulse shape to study the internal electric field profile and trapping effects in neutron damaged silicon detectors

5. S. Martı́ i Garcı́a, et al., A model of charge collection for irradiated p+n detectors, presented at Ninth International Workshop on Vertex Detectors, Sleeping Bear Dunes National Lakeshore, Michigan, USA, September 10–15, 2000, Nucl. Instr. and Meth. A 473 (2001) 128.

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