Depth-dependent charge collection profile of pad diodes-Reference-Cited by-同舟云学术

Depth-dependent charge collection profile of pad diodes

Published:2022-02 Issue: Volume:1025 Page:166177
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Hajheidari M.,Garutti E.,Schwandt J.^ORCID,Ebrahimi A.^ORCID

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Helmholtz-Gemeinschaft

Helmholtz Association

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference23 articles.

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2. Determination of effective trapping times for electrons and holes in irradiated silicon;Kramberger;Nucl. Instrum. Methods Phys. Res. A,2002

3. A new method of carrier trapping time measurement;Brodbeck;Nucl. Instrum. Methods Phys. Res. A,2000

4. The use of the signal current pulse shape to study the internal electric field profile and trapping effects in neutron damaged silicon detectors;Kraner;Nucl. Instrum. Methods Phys. Res. A,1993

5. Carrier lifetimes in heavily irradiated silicon diodes;Beattie;Nucl. Instrum. Methods Phys. Res. A,1999

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1. Study of depth-dependent charge collection profiles in irradiated pad diodes;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-04