Radiation tolerance study of a commercial 65 nm CMOS technology for high energy physics applications
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. Radiation-induced edge effects in deep submicron CMOS transistors
2. Impact of 24-GeV Proton Irradiation on 0.13-$mu$m CMOS Devices
3. Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip
4. RADIATION ISSUES IN THE NEW GENERATION OF HIGH ENERGY PHYSICS EXPERIMENTS
5. Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons
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1. Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs;IEEE Transactions on Nuclear Science;2023
2. Electronic components TID radiation qualification for space applications using LINACs. Comparative analysis with 60Co standard procedure;Advances in Space Research;2022-06
3. DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2022-06
4. Impact of High TID Irradiation on Stability of 65 nm SRAM Cells;IEEE Transactions on Nuclear Science;2022-05
5. Design, Application, and Verification of the Novel SEU Tolerant Abacus-Type Layouts;Electronics;2021-12-03
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