Author:
Snoeys W.,Faccio F.,Burns M.,Campbell M.,Cantatore E.,Carrer N.,Casagrande L.,Cavagnoli A.,Dachs C.,Di Liberto S.,Formenti F.,Giraldo A.,Heijne E.H.M.,Jarron P.,Letheren M.,Marchioro A.,Martinengo P.,Meddi F.,Mikulec B.,Morando M.,Morel M.,Noah E.,Paccagnella A.,Ropotar I.,Saladino S.,Sansen W.,Santopietro F.,Scarlassara F.,Segato G.F.,Signe P.M.,Soramel F.,Vannucci L.,Vleugels K.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference20 articles.
1. Radiation Effects in MOS Capacitors with Very Thin Oxides at 80degK
2. Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides
3. R.C. Lacoe et al., Total dose hardness of CMOS commercial microelectronics, Presented at 1997 RADECS Conference, Nucl. Instr. and Meth., 1999, to be published.
4. D.R. Alexander, Design issues for radiation tolerant microcircuits for space, short course, Presented at the 1996 NSREC Conference, Indian Wells, CA.
5. X-Ray Wafer Probe for Total Dose Testing
Cited by
112 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献