Simulation of new p-type strip detectors with trench to enhance the charge multiplication effect in the n-type electrodes-Reference-Cited by-同舟云学术

Simulation of new p-type strip detectors with trench to enhance the charge multiplication effect in the n-type electrodes

Published:2011-12 Issue:1 Volume:658 Page:98-102
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Fernández-Martínez P.,Pellegrini G.,Balbuena J.P.,Quirion D.,Hidalgo S.,Flores D.,Lozano M.,Casse G.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. Technology of p-type microstrip detectors with radiation hard p-spray, p-stop and moderated p-spray insulations

2. First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon

3. Charge collection efficiency of irradiated n+n wedge silicon microstrip detectors for ATLAS

4. Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration

5. Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions

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