First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference6 articles.
1. Annealing effects on irradiated n+n silicon detectors
2. First results on the charge collection properties of segmented detectors made with p-type bulk silicon
3. Silicon strip detector designs for the ATLAS experiment
4. Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion
5. New irradiation zones at the CERN-PS
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