Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion-Reference-Cited by-同舟云学术

Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion

Published:1999-12 Issue:2-3 Volume:438 Page:429-432
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Casse G,Glaser M,Lemeilleur F,Ruzin A,Wegrzecki M

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

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2. CMS Collaboration, CMS Technical Proposal, CERN/LHCC 94-38, December 1994.

3. ROSE Collaboration, RD48 Status Report, CERN/LHCC 97-39, 20 June 1997.

4. B.C. McEvoy, Investigations using a simple model for defect kinetics in silicon, CERN-RD20 TN/95-41, April 1995.

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