Radiative recombination processes and fermi edge singularity in modulation doped n-type GaInAs/AlInAs multiple quantum wells
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference20 articles.
1. Optical processes of 2D electron plasma in GaAs-(AlGa)As heterostructures
2. Spectroscopy of a high-mobility GaAs-Ga1−xAlxAs one-side-modulation-doped quantum well
3. Many-Body Effects in a Modulation-Doped Semiconductor Quantum Well
4. Optical investigation of modulation‐doped In0.53Ga0.47As/In0.48Al0.52As multiple quantum well heterostructures
5. The effect of InP substrate misorientation on GaInAs‐AlInAs interface and alloy quality
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1. Investigation on many-body effects in micro-LEDs under ultra-high injection levels;Optics Express;2021-04-14
2. Use of micro-photoluminescence as a contactless measure of the 2D electron density in a GaAs quantum well;Applied Physics Letters;2017-06-26
3. Photoluminescence analysis of InAIAs-InGaAs HFET Material with Varied Placement of Heavy δ-Doping;Journal of Electronic Materials;1996-10
4. Fermi-edge singularities in the optical emission of doped direct and indirect quantum wells;Journal of Physics: Condensed Matter;1996-03-11
5. Demonstration of strong saturation of traps in multiple, narrow, slightly asymmetric coupled quantum wells;Journal of the Optical Society of America B;1993-01-01
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