Inductively coupled plasma etching of III–V semiconductors in Cl2-based chemistries-Reference-Cited by-同舟云学术

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Inductively coupled plasma etching of III–V semiconductors in Cl2-based chemistries

Published:1998-04 Issue:1 Volume:1 Page:65-73
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Lee J.W,Lambers E.S,Abernathy C.R,Pearton S.J,Shul R.J,Ren F,Hobson W.S,Constantine C

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference28 articles.

1. Microwave components for cellular portable radiotelephone

2. Critical issues of III–V compound semiconductor processing

3. Analysis of the operating-speed and power consumption of GaAs DCFL D-type flip-flops

4. Effects of H2 plasma exposure on GaAsAlGaAs heterojunction bipolar transistors

5. Temperature dependent electron cyclotron resonance etching of InP, GaP, and GaAs

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Room temperature inductively coupled plasma etching of InP with Cl2 mixtures using SiO2 and photoresist masks;Journal of Vacuum Science & Technology B;2024-02-14

2. Nanoscale Pattern Transfer by Etching;Nanofabrication;2024

3. Kinetics and mechanisms for ion-assisted etching of InP thin films in HBr + Cl2 + Ar inductively coupled plasma with various HBr/Cl2 mixing ratios;Thin Solid Films;2018-08

4. Inductively coupled plasma etching of GaAs in Cl 2 /Ar, Cl 2 /Ar/O 2 chemistries with photoresist mask;Applied Surface Science;2015-11

5. Fabrication of Sub-25 nm Diameter GaSb Nanopillar Arrays by Nanoscale Self-Mask Effect;Nano Letters;2015-07-31

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