Transients during pre-breakdown and hard breakdown of thin gate oxides in metal–SiO2

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Transients during pre-breakdown and hard breakdown of thin gate oxides in metal–SiO2–Si capacitors

Published:1999-12 Issue:4 Volume:2 Page:359-367
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Lombardo S,Crupi F,Spinella C,Neri B

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. Stathis H, Di Maria DJ. IEDM Tech Dig, 1998. p. 167

2. Trap creation in silicon dioxide produced by hot electrons

3. Oxide field dependence of SiSiO2 interface state generation and charge trapping during electron injection

4. Dielectric breakdown in electrically stressed thin films of thermal SiO2

5. The Role of Electron and Hole Traps in the Degradation and Breakdown of thermally grown SiO2 Layers

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability limits for the gate insulator in CMOS technology;IBM Journal of Research and Development;2002-03

2. Physical and predictive models of ultra thin oxide reliability in CMOS devices and circuits;2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167)

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