Three-junction Au/AlGaAs(n)/GaAs(p)/Ag photodiode
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference16 articles.
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3. Effect of gamma irradiation on photoconversion characteristics of metal/gallium arsenide barrier structures with textured interface;Dmitruk;Tech Phys,2002
4. Control of charge transport mode in the Schottky barrier by δ-doping;Shashkin;Semiconductors,2002
5. Karimov AV. Three-barrier photodiode. USSR Patent. * 1676399. 08.05., 1991.
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