Temperature dependent current–voltage characteristics of Ag/Zn2GeO4/Si diode grown by thermal evaporation method
Author:
Funder
Pakistan Science Foundation
Publisher
Elsevier BV
Subject
General Medicine
Reference21 articles.
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3. Growth and interface properties of Au Schottky contact on ZnO grown by molecular beam epitaxy;Asghar;J. Phys. Conf. Ser.,2013
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