Effect of ballistic electron transport in metal-n-GaAs-n +-GaAs Schottky-barrier structures-Reference-Cited by-同舟云学术

Effect of ballistic electron transport in metal-n-GaAs-n +-GaAs Schottky-barrier structures

Published:2001-07 Issue:7 Volume:35 Page:788-795
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Torkhov N. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1385714.pdf

Reference23 articles.

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2. K. Shenai and R. W. Dutton, IEEE Trans. Electron. Devices 35(4), 468 (1988).

3. Modern Semiconductor Device Physics, Ed. by S. M. Sze (Wiley, New York, 1997).

4. M. I. Veksler, Fiz. Tekh. Poluprovodn. (St. Petersburg) 30(9), 1718 (1996) [Semiconductors 30, 899 (1996)].

5. V. N. Dobrovol’skii, G. K. Nitsidze, and V. N. Petrusenko, Fiz. Tekh. Poluprovodn. (St. Petersburg) 28(4), 651 (1994) [Semiconductors 28, 390 (1994)].

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