GaN-based optoelectronic devices on sapphire and Si substrates
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference19 articles.
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3. Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates;Redwing;Appl Phys Lett,1996
4. GaN FET's for microwave and high-temperature applications;Binari;Solid-State Electron,1997
5. Recessed gate GaN MODFETs;Burm;Solid-State Electron,1997
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