Stress evolution during epitaxial growth of SrO films on hydrogen-terminated Si(111) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference18 articles.
1. Mechanical stresses in (sub)monolayer epitaxial films
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1. Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method;Ceramics International;2013-09
2. Analysis of buried heterointerfacial hydrogen in highly lattice-mismatched epitaxy on silicon;Thin Solid Films;2012-02
3. Epitaxial growth of largely mismatched crystals on H-terminated Si(111) surfaces;Journal of Physics: Condensed Matter;2010-11-15
4. Neutron Reflectometry of Buried Monatomic Hydrogen Layer at the Hetero-Interface in a Highly Mismatched Sr and H-terminated Si(111);Hyomen Kagaku;2010
5. In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces;Thin Solid Films;2006-06
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