In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces-Reference-Cited by-同舟云学术

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In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces

Published:2006-06 Issue:1-2 Volume:508 Page:175-177
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Asaoka H.,Yamazaki T.,Yamamoto H.,Shamoto S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Heteroepitaxial growth of SrO films on Si substrates

2. Epitaxial Growth of SrTiO3Films on Si(100) Substrates Using a Focused Electron Beam Evaporation Method

3. Roles of Buffer Layers in Epitaxial Growth ofSrTiO3Films on Silicon Substrates

4. Effects of buffer layers in epitaxial growth of SrTiO3thin film on Si(100)

5. Surface Physics in Silicon Molecular Beam Epitaxy

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of buried heterointerfacial hydrogen in highly lattice-mismatched epitaxy on silicon;Thin Solid Films;2012-02

2. Epitaxial growth of largely mismatched crystals on H-terminated Si(111) surfaces;Journal of Physics: Condensed Matter;2010-11-15

3. Neutron Reflectometry of Buried Monatomic Hydrogen Layer at the Hetero-Interface in a Highly Mismatched Sr and H-terminated Si(111);Hyomen Kagaku;2010

4. Buried H Monolayer at Hetero-Interface between Highly Mismatched Sr Films and Si Substrates;Transactions of the Materials Research Society of Japan;2008

5. Epitaxial growth of SrO on Si(001): Chemical and thermal stability;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007-11

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