In-situ ellipsometric studies on epitaxially grown silicon by hot-wire CVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference20 articles.
1. Low Temperature Silicon Epitaxy by Partially Ionized Vapor Deposition
2. Ion beam epitaxy of silicon on Ge and Si at temperatures of 400 K
3. Epitaxial growth of silicon by photochemical vapor deposition at a very low temperature of 200 °C
4. Very low temperature (250 °C) epitaxial growth of silicon by glow discharge of silane
5. Study on further reducing the epitaxial silicon temperature down to 250 °C in low‐energy bias sputtering
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3. Low-temperature silicon homoepitaxy by hot-wire chemical vapor deposition with a Ta filament;Journal of Crystal Growth;2006-01
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