Low-temperature silicon homoepitaxy by hot-wire chemical vapor deposition with a Ta filament-Reference-Cited by-同舟云学术

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Low-temperature silicon homoepitaxy by hot-wire chemical vapor deposition with a Ta filament

Published:2006-01 Issue:2 Volume:287 Page:414-418
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Teplin Charles W.,Wang Qi,Iwaniczko Eugene,Jones Kim M.,Al-Jassim Mowafak,Reedy Robert C.,Branz Howard M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. The future of crystalline silicon films on foreign substrates

2. Well-Oriented Silicon Thin Films with High Carrier Mobility on Polycrystalline Substrates

3. A novel route to a polycrystalline silicon thin-film solar cell

4. Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)

5. Semiconductor molecular‐beam epitaxy at low temperatures

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diffusion of excessively adsorbed hydrogen atoms on hydrogen terminated Si(100)(2×1) surface;AIP Advances;2021-08-01

2. Properties of Inorganic Films Prepared by Cat-CVD;Catalytic Chemical Vapor Deposition;2019-02-15

3. a-Si:H passivation layer growth by HWCVD for Si heterojunction solar cells: Critical dependence on substrate temperature;AIP Conference Proceedings;2018

4. Low temperature plasma deposition of silicon thin films: From amorphous to crystalline;Journal of Non-Crystalline Solids;2012-09

5. Hot-wire chemical vapor deposition of epitaxial film crystal silicon for photovoltaics;Thin Solid Films;2011-05

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