Vertical transport of photo-excited carriers for excitonic recombinations in modulation doped heterojunctions-Reference-Cited by-同舟云学术

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Vertical transport of photo-excited carriers for excitonic recombinations in modulation doped heterojunctions

Published:1998-05 Issue:8 Volume:106 Page:495-499
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Shen J.X.,Oka Y.,Ossau W.,Landwehr G.,Friedland K.-J.,Hey R.,Ploog K.,Weimann G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference13 articles.

1. Optical detection of the integer and fractional quantum Hall effects in GaAs

2. Magneto-optical probe of two-dimensional electron liquid and solid phases

3. Theory of transient excitonic optical nonlinearities in semiconductor quantum-well structures

4. New photoluminescence effects of carrier confinement at an AlGaAs/GaAs heterojunction interface

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1. Effect of electric current on the optical orientation of interface electrons in AlGaAs/GaAs heterostructures;Physical Review B;2020-07-09

2. Enhanced exciton photoluminescence in the selectively Si-doped GaAs/AlxGa1−xAs heterostructures;Journal of Applied Physics;2010-09-15

3. Two-Dimensional Electron Gas Recombination in Undoped AlGaN/GaN Heterostructures;Japanese Journal of Applied Physics;2004-06-09

4. Optically Detected Cyclotron Resonance in CdTe;Journal of the Physical Society of Japan;2001-07-15

5. Observation of excitons formed by the holes confined at the Al0.5Ga0.5As/GaAs interface;Microelectronic Engineering;2000-05

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