Effect of growth interruption on the optical properties of InAs/GaAs quantum dots-Reference-Cited by-同舟云学术

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Effect of growth interruption on the optical properties of InAs/GaAs quantum dots

Published:1999-02 Issue:10 Volume:109 Page:649-653
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Lu Z.D.,Xu J.Z.,Zheng B.Z.,Xu Z.Y.,Ge W.K.

Funder

Research Grants Council, University Grants Committee

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference10 articles.

1. Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption

2. Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques

3. Optical investigation of the self-organized growth of InAs/GaAs quantum boxes

4. Nonlinear luminescence and time‐resolved diffusion profiles of photoexcited carriers in semiconductors

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical Properties and Post-Growth Annealing Effects of InAs Quantum Dots with a GaAs/InGaAs Strained Layer;Journal of the Korean Physical Society;2009-01-15

2. Effect of annealing ambient flux on InAs islands grown on GaAs(001) substrates by metal–organic vapor phase epitaxy;Materials Chemistry and Physics;2006-04

3. MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3μm in single and stacked layers;Journal of Crystal Growth;2005-02

4. Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5μm;Journal of Crystal Growth;2005-01

5. Morphology and optical properties of InAs(N) quantum dots;Journal of Applied Physics;2004-09

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