Thermally activated change of symmetry of carbon related center in irradiated silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference9 articles.
1. Identification of a bistable defect in silicon: The carbon interstitial‐carbon substitutional pair
2. Bistable defect in silicon: The interstitial-carbon–substitutional-carbon pair
3. Optical Detection of Magnetic Resonance for a Deep-Level Defect in Silicon
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Spin-dependent recombination electron paramagnetic resonance spectroscopy of defects in irradiated silicon detectors;Journal of Applied Physics;2003-06-15
2. New low symmetry configuration of the two carbon–interstitial silicon complex in irradiated silicon;Solid State Communications;2002-12
3. Silicon, paramagnetic centers: principal values of g-tensors of trigonal centers;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements
4. Silicon, paramagnetic centers: principal values and orientations of g-tensors of monoclinic-I centers;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements
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